FCA35N60
Manufacturer:
On Semiconductor
Mfr.Part #:
FCA35N60
Datasheet:
Description:
MOSFETs TO-3PN Through Hole N-Channel number of channels:1 312.5 W 650 V Continuous Drain Current (ID):35 A 139 nC
| Parameter | Value |
|---|---|
| Length | 15.8 mm |
| Width | 5 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 20.1 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 312.5 W |
| Power Dissipation | 312.5 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 6.64 nF |
| Continuous Drain Current (ID) | 35 A |
| Rds On Max | 98 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 34 ns |
| Turn-Off Delay Time | 105 ns |
| Element Configuration | Single |
| Fall Time | 73 ns |
| Rise Time | 120 ns |
| Gate Charge | 139 nC |
| Drain to Source Resistance | 79 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 5 V |
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